We have studied the electronic properties of epitaxial graphene devicespatterned in a meander shape with the length up to a few centimeters and thewidth of few tens of microns. These samples show a pronounced dependence of theresistance on temperature. Accurate comparison with theory shows that thistemperature dependence originates from the weak localization effect observedover a broad temperature range from 1.5 K up to 77 K. The comparison allows usto estimate the characteristic times related to quantum interference. Inaddition, a large resistance enhancement with temperature is observed at thequantum Hall regime near the filling factor of 2. Record high resistance andits strong temperature dependence are favorable for the construction ofbolometric photodetectors.
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